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zmm?hs series silicon epitaxial planar zener diodes absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t stg - 55 to + 175 o c 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 1) k/mw forward voltage at i f = 100 ma v f 1 v 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) zmm2v0hs 1.88 2.2 5 100 5 120 0.5 zmm2v0hsa 1.88 2.1 5 100 5 120 0.5 zmm2v0hsb 2.02 2.2 5 100 5 120 0.5 zmm2v2hs 2.12 2.41 5 100 5 120 0.7 zmm2v2hsa 2.12 2.3 5 100 5 120 0.7 zmm2v2hsb 2.22 2.41 5 100 5 120 0.7 zmm2v4hs 2.33 2.63 5 100 5 120 1 zmm2v4hsa 2.33 2.52 5 100 5 120 1 zmm2v4hsb 2.43 2.63 5 100 5 120 1 zmm2v7hs 2.54 2.91 5 110 5 100 1 zmm2v7hsa 2.54 2.75 5 110 5 100 1 zmm2v7hsb 2.69 2.91 5 110 5 100 1 zmm3v0hs 2.85 3.22 5 120 5 50 1 zmm3v0hsa 2.85 3.07 5 120 5 50 1 zmm3v0hsb 3.01 3.22 5 120 5 50 1 ll-34 ? product specification 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) zmm3v3hs 3.16 3.53 5 120 5 20 1 zmm3v3hsa 3.16 3.38 5 120 5 20 1 zmm3v3hsb 3.32 3.53 5 120 5 20 1 zmm3v6hs 3.47 3.83 5 120 5 10 1 zmm3v6hsa 3.47 3.68 5 120 5 10 1 zmm3v6hsb 3.62 3.83 5 120 5 10 1 zmm3v9hs 3.77 4.14 5 120 5 5 1 zmm3v9hsa 3.77 3.98 5 120 5 5 1 zmm3v9hsb 3.92 4.14 5 120 5 5 1 zmm4v3hs 4.05 4.53 5 120 5 5 1 zmm4v3hsa 4.05 4.26 5 120 5 5 1 zmm4v3hsb 4.2 4.4 5 120 5 5 1 zmm4v3hsc 4.34 4.53 5 120 5 5 1 zmm4v7hs 4.47 4.91 5 100 5 5 1 zmm4v7hsa 4.47 4.65 5 100 5 5 1 zmm4v7hsb 4.59 4.77 5 100 5 5 1 zmm4v7hsc 4.71 4.91 5 100 5 5 1 zmm5v1hs 4.85 5.35 5 70 5 5 1.5 zmm5v1hsa 4.85 5.03 5 70 5 5 1.5 zmm5v1hsb 4.97 5.18 5 70 5 5 1.5 zmm5v1hsc 5.12 5.35 5 70 5 5 1.5 zmm5v6hs 5.29 5.88 5 40 5 5 2.5 zmm5v6hsa 5.29 5.52 5 40 5 5 2.5 zmm5v6hsb 5.46 5.7 5 40 5 5 2.5 zmm5v6hsc 5.64 5.88 5 40 5 5 2.5 zmm6v2hs 5.81 6.4 5 30 5 5 3 zmm6v2hsa 5.81 6.06 5 30 5 5 3 zmm6v2hsb 5.99 6.24 5 30 5 5 3 zmm6v2hsc 6.16 6.4 5 30 5 5 3 zmm6v8hs 6.32 6.97 5 25 5 2 3.5 zmm6v8hsa 6.32 6.59 5 25 5 2 3.5 zmm6v8hsb 6.52 6.79 5 25 5 2 3.5 zmm6v8hsc 6.7 6.97 5 25 5 2 3.5 zmm7v5hs 6.88 7.64 5 25 5 0.5 4 zmm7v5hsa 6.88 7.19 5 25 5 0.5 4 zmm7v5hsb 7.11 7.41 5 25 5 0.5 4 zmm7v5hsc 7.33 7.64 5 25 5 0.5 4 zmm8v2hs 7.56 8.41 5 20 5 0.5 5 zmm8v2hsa 7.56 7.9 5 20 5 0.5 5 zmm8v2hsb 7.82 8.15 5 20 5 0.5 5 zmm8v2hsc 8.07 8.41 5 20 5 0.5 5 ZMM9V1HS 8.33 9.29 5 20 5 0.5 6 ZMM9V1HSa 8.33 8.7 5 20 5 0.5 6 ZMM9V1HSb 8.61 8.99 5 20 5 0.5 6 ZMM9V1HSc 8.89 9.29 5 20 5 0.5 6 zmm?hs series silicon epitaxial planar zener diodes ? product specification 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) zmm10hs 9.19 10.3 5 20 5 0.2 7 zmm10hsa 9.19 9.59 5 20 5 0.2 7 zmm10hsb 9.48 9.9 5 20 5 0.2 7 zmm10hsc 9.82 10.3 5 20 5 0.2 7 zmm11hs 10.18 11.26 5 20 5 0.2 8 zmm11hsa 10.18 10.63 5 20 5 0.2 8 zmm11hsb 10.5 10.95 5 20 5 0.2 8 zmm11hsc 10.82 11.26 5 20 5 0.2 8 zmm12hs 11.13 12.3 5 25 5 0.2 9 zmm12hsa 11.13 11.63 5 25 5 0.2 9 zmm12hsb 11.5 11.92 5 25 5 0.2 9 zmm12hsc 11.8 12.3 5 25 5 0.2 9 zmm13hs 12.18 13.62 5 25 5 0.2 10 zmm13hsa 12.18 12.71 5 25 5 0.2 10 zmm13hsb 12.59 13.16 5 25 5 0.2 10 zmm13hsc 13.03 13.62 5 25 5 0.2 10 zmm15hs 13.48 15.02 5 25 5 0.2 11 zmm15hsa 13.48 14.09 5 25 5 0.2 11 zmm15hsb 13.95 14.56 5 25 5 0.2 11 zmm15hsc 14.42 15.02 5 25 5 0.2 11 zmm16hs 14.87 16.5 5 25 5 0.2 12 zmm16hsa 14.87 15.5 5 25 5 0.2 12 zmm16hsb 15.33 15.96 5 25 5 0.2 12 zmm16hsc 15.79 16.5 5 25 5 0.2 12 zmm18hs 16.34 18.3 5 30 5 0.2 13 zmm18hsa 16.34 17.06 5 30 5 0.2 13 zmm18hsb 16.9 17.67 5 30 5 0.2 13 zmm18hsc 17.51 18.3 5 30 5 0.2 13 zmm20hs 18.14 20.45 5 30 5 0.2 15 zmm20hsa 18.14 18.96 5 30 5 0.2 15 zmm20hsb 18.8 19.68 5 30 5 0.2 15 zmm20hsc 19.52 20.45 5 30 5 0.2 15 zmm22hs 20.23 22.61 5 30 5 0.2 17 zmm22hsa 20.23 21.08 5 30 5 0.2 17 zmm22hsb 20.76 21.65 5 30 5 0.2 17 zmm22hsc 21.22 22.09 5 30 5 0.2 17 zmm22hsd 21.68 22.61 5 30 5 0.2 17 zmm24hs 22.26 24.81 5 35 5 0.2 19 zmm24hsa 22.26 23.12 5 35 5 0.2 19 zmm24hsb 22.75 23.73 5 35 5 0.2 19 zmm24hsc 23.29 24.27 5 35 5 0.2 19 zmm24hsd 23.81 24.81 5 35 5 0.2 19 zmm27hs 24.26 27.64 5 45 5 0.2 21 zmm27hsa 24.26 25.52 5 45 5 0.2 21 zmm27hsb 24.97 26.26 5 45 5 0.2 21 zmm?hs series silicon epitaxial planar zener diodes ? product specification 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech
characteristics at t a = 25 o c type zener voltage 1) dynamic resistance reverse leakage current v z at l zt z zt at l zt i r at v r min. (v) max. (v) (ma) max. ( ? ) (ma) max. (a) (v) zmm27hsc 25.63 26.95 5 45 5 0.2 21 zmm27hsd 26.29 27.64 5 45 5 0.2 21 zmm30hs 26.99 30.51 5 55 5 0.2 23 zmm30hsa 26.99 28.39 5 55 5 0.2 23 zmm30hsb 27.7 29.13 5 55 5 0.2 23 zmm30hsc 28.36 29.82 5 55 5 0.2 23 zmm30hsd 29.02 30.51 5 55 5 0.2 23 zmm33hs 29.68 33.11 5 65 5 0.2 25 zmm33hsa 29.68 31.22 5 65 5 0.2 25 zmm33hsb 30.32 31.88 5 65 5 0.2 25 zmm33hsc 30.9 32.5 5 65 5 0.2 25 zmm33hsd 31.49 33.11 5 65 5 0.2 25 zmm36hs 32.14 35.77 5 75 5 0.2 27 zmm36hsa 32.14 33.79 5 75 5 0.2 27 zmm36hsb 32.79 34.49 5 75 5 0.2 27 zmm36hsc 33.4 35.13 5 75 5 0.2 27 zmm36hsd 34.01 35.77 5 75 5 0.2 27 zmm39hs 34.68 38.52 5 85 5 0.2 30 zmm39hsa 34.68 36.47 5 85 5 0.2 30 zmm39hsb 35.36 37.19 5 85 5 0.2 30 zmm39hsc 36 37.85 5 85 5 0.2 30 zmm39hsd 36.63 38.52 5 85 5 0.2 30 1) tested with pulse tp = 20 ms 30 27hs test current i z 5ma 0 0 10 20 i z 10 v z 20 15hs 12hs 10hs 18hs 22hs 40 v 30 33hs t j =25 c 7 4v7hs 0v8hs breakdow n characteristics at t j =constant (pulsed) 5ma t e st c u rre nt i z 10 ma 1 0 0 20 30 i z 4 2 3 v z 56 breakdow n characteristics at t j =constant (pulsed) ma 50 40 t j =25 c 3v3hs 2v7hs 3v9hs 5v6hs 6v8hs 10 v 89 8v2hs zmm?hs series silicon epitaxial planar zener diodes ? product specification 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com semtech

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